B1229
B1229 is PNP/NPN Epitaxial Planar Silicon Transistor manufactured by SANYO.
Features
- Adoption of FBET, MBIT processes.
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- Fast switching time.
PNP/NPN Epitaxial Planar Silicon Transistor
2SB1229/2SD1835
Driver Applications
Package Dimensions unit:mm 2003A
[2SB1229/2SD1835]
( ) : 2SB1229
Specifications
JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
B : Base C : Collector E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Ratings (- )60 (- )50 (- )6 (- )2 (- )3 0.75 150
- 55 to +150
Unit V V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage
ICBO IEBO h FE1 h FE2 f T Cob VCE(sat)
VCB=(- )50V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )100m A VCE=(- )2V, IC=(- )1.5A VCE=(- )10V, IC=(- )50m A VCB=(- )10V, f=1MHz IC=(- )1A, IB=(- )50m A
Ratings min typ
100- 40
150 12(22)
0.15 (- 0.3) max (- )100 (- )100
560-
0.4 (- 0.7)
Unit n A n A
MHz p F V...
