* Large current capacity.
* Low collector to emitter saturation voltage.
* Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Ma
B1295
Sanyo
131.39 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Application.
📁 Related Datasheet
B1292 2SB1292 (SavantIC)
B1296 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
B120 Low Voltage X-Ray Tube (Ferranti)
B120 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B120 highly integrated single chip interface controller (Genesis Microchip)
B120-E3 Surface Mount Schottky Barrier Rectifier (Vishay)
B120-M3 Surface Mount Schottky Barrier Rectifier (Vishay)
B1200CALRP SIDACtor Protection Thyristors (Littelfuse)
B1200CCLRP SIDACtor Protection Thyristors (Littelfuse)
B1200W-F Small Signal Schottky Diode (VIKING TECH)
