NPN Triple Diffused Planar Silicon Transistor
500V/7A Switching Regulator Applications
· High breakdown voltage and high reliability.
· Fast switching speed (tf : 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
PW≤300µs, Duty Cycle≤10%
–55 to +150
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
ICBO VCB=500V, IE=0
Emitter Cutoff Current
DC Current Gain
fT VCE=10V, IC=0.6A
Cob VCB=10V, f=1MHz
* : The hFE1 of the 2SC3449 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/6200MO/4217KI/3085KI/6154KI, MT No.1572–1/4