C3576 Datasheet 2SC3576

Manufacturer: SANYO (now Panasonic)

C3576 2sc3576 by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	C3576
Manufacturer	SANYO (now Panasonic)
File Size	106.51 KB
Description	2SC3576
Download	C3576 Download (PDF)

Overview

Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF general-purpose amplifiers, various drivers, muting circuit.

Key Features

Adoption of FBET process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO V.

More Datasheets from SANYO (now Panasonic)

Part Number	Description
C3591	2SC3591
C3595	2SC3595
C3596	2SC3596
C3597	2SC3597
C3598	2SC3598
C3599	2SC3599