C3651 Datasheet 2SC3651

Manufacturer: SANYO (now Panasonic)

C3651 2sc3651 by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	C3651
Manufacturer	SANYO (now Panasonic)
File Size	88.94 KB
Description	2SC3651
Download	C3651 Download (PDF)

Overview

Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit.

Key Features

High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Puls.

More Datasheets from SANYO (now Panasonic)

Part Number	Description
C3650	2SC3650
C3656	PNP/NPN Silicon Transistor
C3600	2SC3600
C3637	2SC3637
C3638	2SC3638
C3643	2SC3643
C3644	2SC3644
C3645	2SC3645
C3646	2SC3646
C3647	2SC3647