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Sanyo Electric Components Datasheet

C3689 Datasheet

2SC3689

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C3689 pdf
Ordering number : EN1855B
2SC3689
SANYO Semiconductors
DATA SHEET
2SC3689
NPN Epitaxial Planar Silicon Transistor
High-hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
Low-frequency general-purpose amplifiers, drivers, muting circuit.
Features
Small Cob (Cob=1.5pF).
Ultrasmall-sized package permitting 2SC3689-used sets to be made smaller, slimmer.
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)0.5V).
High VEBO (VEBO15V).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
60
50
15
100
200
200
150
--55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1907LA TI IM TC-00001108 / 61704TN(PC)/N3098HA(KT)/4237AT/N195KI,TS No.1855-1/4


Sanyo Electric Components Datasheet

C3689 Datasheet

2SC3689

No Preview Available !

C3689 pdf
Electrical Characteristics at Ta=25°C
2SC3689
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Package Dimensions
unit : mm (typ)
7013A-009
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=40V, IE=0A
VEB=10V, IC=0A
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
IC=50mA, IB=1mA
IC=50mA, IB=1mA
IC=10µA, IE=0A
IC=1mA, RBE=
IE=10µA, IC=0A
2.9 0.1
3
1
0.95
2
0.4
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
min typ
800 1500
200
1.5
0.1
0.8
60
50
15
max
0.1
0.1
3200
0.5
1.1
Unit
µA
µA
MHz
pF
V
V
V
V
V
100
80 34540050µ0µAµAA
60
40
IC -- VCE
500µA
250µA
200µA
150µA
100µA
50µA
20
0 IB=0µA
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE -- V ITR05836
IC -- VCE
20
16 10µA
9µA
8µA
12 7µA
6µA
5µA
8 4µA
3µA
4 2µA
1µA
0 IB=0µA
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE -- V ITR05837
No.1855-2/4


Part Number C3689
Description 2SC3689
Maker Sanyo
Total Page 4 Pages
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