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C4476 - 2SC4476

Key Features

  • High breakdown voltage (VCEO min=1800V).
  • Small Cob (Cob typ=1.8pF).
  • Wide ASO.
  • High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4476] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Sto.

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Other Datasheets by SANYO (now Panasonic)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications · High voltage amplifier. · High voltage switching. · Dynamic focus. Features · High breakdown voltage (VCEO min=1800V). · Small Cob (Cob typ=1.8pF). · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4476] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.