* High breakdown voltage (VCEO≥300V).
* Excellent high frequency characteristic.
* Adoption of MBIT process. PNP/NPN Epitaxial Planar Silicon Transistors 2SA.

Package Dimensions unit:mm 2064 [2SA1710/2SC4490] ( ) : 2SA1710 Specifications Absolute Maximum Ratings at Ta = 25˚C .

C4491

C4492

C4493

C4495

C4497

C4400

C4401

C4402

C4403

C4404

C4405

C4406

C4407