NPN Epitaxial Planar Silicon Transistors
High-Speed Switching Applications
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small-sized package.
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Mounted on ceramic board (250mm2× 0.8mm)
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
–55 to +150
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
* : The 2SC4521 is classified by 500mA hFE as follows : 100 R 200 140 S 280 200 T 400
Marking : CL
hFE rank : R, S, T
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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