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Sanyo Electric Components Datasheet

C4555 Datasheet

2SC4555

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Ordering number:EN3187
PNP/NPN Epitaxial Planar Silicon Transistor
2SA1745/2SC4555
Low-Frequency General-Purpose
Amplifier Applications
Features
· Very small-sized package permitting the 2SA1745/
2SC4555-applied set to be made small and slim.
· Low collector-to-emitter saturation voltage.
Package Dimensions
unit:mm
2059
[2SA1745/2SC4555]
( ) : 2SA1745
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)15V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)10mA
VCE=(–)2V, IC=(–)400mA
VCE=(–)2V, IC=(–)50mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
B : Base
C : Collector
E : Emitter
SANYO : MCP
Ratings
(–)20
(–)15
(–)5
(–)500
(–)1
150
150
–55 to +150
Unit
V
V
V
mA
A
mW
˚C
˚C
Ratings
min typ
135*
(70)80
300
(400)
(6.5)
4.0
max
(–)0.1
(–)0.1
600*
Unit
µA
µA
MHz
MHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/7219YT, TS No.3187-1/4


Sanyo Electric Components Datasheet

C4555 Datasheet

2SC4555

No Preview Available !

2SA1745/2SC4555
Parameter
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
VCE(sat)1 IC=(–)5mA, IB=(–)0.5mA
VCE(sat)2 IC=(–)200mA, IB=(–)10mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)200mA, IB=(–)10mA
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=(–)10µA, IE=0
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=(–)1mA, RBE=
Emiiter-to-Base Breakdown Voltage
V(BR)EBO IE=(–)10µA, IC=0
* : The 2SA1745/2SC4555 are classified by 10mA hFE as follows :
130 5 270 200 6 400 300 7 600
Marking 2SA1745 : ES
2SC4555 : UT
hFE rank : 5, 6, 7
Ratings
min typ
(–)15
160
(–200)
(–)0.95
(–)20
(–)15
(–)5
max
(–35)
30
300
(–360)
(–)1.2
Unit
mV
mV
V
V
V
V
No.3187-2/4


Part Number C4555
Description 2SC4555
Maker Sanyo
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C4555 Datasheet PDF






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