C4736 Description
EN3975A 2SC4736 SANYO Semiconductors DATA SHEET 2SC4736 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications.
C4736 Key Features
- Large current (IC=2A)
- Adoption of MBIT process
- High DC current gain (hFE=800 to 3200)
- Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V)
- High emitter-to-base voltage (VEBO≥15V)
- Large power type such as PC=1.5W when used without heatsink
- It is possible to make appliances more pact because its height on board is 9.5mm
- Effective in automatic inserting and counting stocked amount because of being provided for radial taping