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Sanyo Electric Components Datasheet

C5832 Datasheet

2SC5832

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Ordering number : ENN7287
2SC5832
NPN Epitaxial PlanwarwSwilic. oDnaTtraanS shisetoert 4 U . c o m
2SC5832
Driver Applications
Applications
Package Dimensions
Suitable for use in switching of inductive load
unit : mm
(motor drivers, printer hammer drivers, relay drivers). 2045B
Features
High DC current gain.
Wide ASO.
On-chip zener diode of 65±10V between collector and
base.
Uniformity in collector-to-base voltage.
Large inductive load handling capability.
[2SC5832]
6.5
5.0 2.3
4 0.5
0.85
0.7
1.2
0.6
12 3
2.3 2.3
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit : mm
2044B
6.5
5.0
4
[2SC5832]
2.3
0.5
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13003 TS IM TA-G3I67IM0 No.7287-1/4


Sanyo Electric Components Datasheet

C5832 Datasheet

2SC5832

No Preview Available !

2SC5832
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
On-chip zener diode(65±10V)
On-chip zener diode(65±10V)
Tc=25°C
www.DataSheet4U.com
Ratings
55
55
6
2
4
1.0
10
150
55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Inductive Load
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Es / b
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
ton
tstg
tf
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=1A
L=100mH, RBE=100
IC=1A, IB=4mA
IC=1A, IB=4mA
IC=100µA, IE=0
IC=1mA, RBE=
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
1000
25
55
55
4000
180
1.0
65
65
0.2
3.5
0.5
max
10
2
1.5
2.0
75
75
Unit
µA
mA
MHz
mJ
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
PW=50µs, Duty Cycle1%
IB1= --IB2=4mA
INPUT
50
RB
VR
+
100µF
VBB= --5V
IC=250A, IB1= --250A, IB2=1A
OUTPUT
TUT
RL
20
+
470µF
VCC=20V
Es / b Test Circuit
VCC=20V, RBE=100
SW
L +VCC
TUT
IB RBE
10k300
IC -- VCE
2.0
1500µA
1000µA
1.6
1.2
500µA
450µA 400µA 350µA 300µA
250µA
0.8 200µA
150µA
0.4
0 IB=0
0 12 345
Collector-to-Emitter Voltage, VCE -- V ITR06005
IC -- VBE
2.4
VCE=5V
2.0
1.6
1.2
0.8
0.4
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Base-to-Emitter Voltage, VBE -- V ITR06006
No.7287-2/4


Part Number C5832
Description 2SC5832
Maker Sanyo
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