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C6117 - 2SC6117

Key Features

  • High speed.
  • High breakdown voltage (VCBO=1500V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Charact.

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Full PDF Text Transcription for C6117 (Reference)

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www.DataSheet4U.com Ordering number : ENA0901 2SC6117 SANYO Semiconductors DATA SHEET 2SC6117 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection...

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iple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Ratings 1500 800 6 8 20 3.