* Suitable for sets whose height is restricted.
* Low collector to emitter saturation voltage : VCE(sat)=
* 0.5V (PNP), 0.4V (NPN) max.
* Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emitter C : Collector B : Base SA
D1903
Sanyo
129.33 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN2263A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1267/2SD1903 30V/8A High-Current Switching Applications Applications S.
📁 Related Datasheet
D1902 2SD1902 (Sanyo)
D1904 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
D1906 PNP/NPN Epitaxial Planar Type Silicon Transistors (Sanyo)
D1907 PNP/NPN Epitaxial Planar Type Silicon Transistors (Sanyo)
D1910 2SD1910 (Wing Shing Electronic)
D1911 2SD1911 (Wing Shing Computer Components)
D1912 2SD1912 (Inchange Semiconductor)
D1913 2SD1913 (Sanyo Semicon Device)
D1918 Silicon NPN Power Transistor (Inchange Semiconductor)
D1918 2SD1918 (Rohm)
