FW811
Features
- 4V drive.
- posite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID ID IDP PD PT Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
Ratings 35
±20 8 9
52 2.0 2.2 150 --55 to +150
Unit V V A A A W W °C °C
Parameter
Symbol
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W811
V(BR)DSS IDSS IGSS VGS(off) | yfs |
RDS(on)1 RDS(on)2 RDS(on)3
Conditions
ID=1m A, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V...
