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Sanyo Electric Components Datasheet

FW811 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1570
FW811
SANYO Semiconductors
DATA SHEET
FW811
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
4V drive.
Composite type, facilitating high-density mounting.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10s)
Drain Current (PW10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Duty cycle1%
Duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW10s
Ratings
35
±20
8
9
52
2.0
2.2
150
--55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W811
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=10V
ID=4A, VGS=4.5V
ID=4A, VGS=4V
min
35
1.2
2.7
Ratings
typ
max
1
±10
2.6
Unit
V
μA
μA
V
4.5 S
18 24 mΩ
29 41 mΩ
39 55 mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
D2409PA TK IM TC-00002070 No. A1570-1/4


Sanyo Electric Components Datasheet

FW811 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

FW811
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=20V, VGS=10V, ID=8A
VDS=20V, VGS=10V, ID=8A
VDS=20V, VGS=10V, ID=8A
IS=8A, VGS=0V
Ratings
min typ max
Unit
660 pF
90 pF
60 pF
10 ns
50 ns
40 ns
40 ns
13.0
nC
2.4 nC
3.2 nC
0.81
1.2 V
Package Dimensions
unit : mm (typ)
7005A-003
5.0
85
0.2
0.1
1
1.27
4
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Electrical Connection
8765
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
1 2 3 4 8 : Drain1
Top view
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=20V
ID=8A
RL=2.5Ω
D VOUT
FW811
P.G 50Ω S
No. A1570-2/4


Part Number FW811
Description N-Channel Silicon MOSFET
Maker Sanyo
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FW811 Datasheet PDF





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