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FW813 - N-Channel Silicon MOSFET

Key Features

  • ON-resistance RDS(on)1=39mΩ (typ. ).
  • 4V drive.
  • Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
FW811 N-Channel Silicon MOSFET
FW812 N-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1884 FW813 SANYO Semiconductors DATA SHEET FW813 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=39mΩ (typ.) • 4V drive • Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 60 ±20 5 52 2.3 2.5 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7005A-003 5.0 85 0.