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Sanyo Electric Components Datasheet

FW906 Datasheet

N-Channel and P-Channel Silicon MOSFETs

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Ordering number : ENA1809
FW906
SANYO Semiconductors
DATA SHEET
FW906
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)
4V drive
N-channel MOSFET + P-channel MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10s)
Drain Current (PW100ms)
Drain Current (PW10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle1%
Duty cycle1%
Duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW10s
N-channel P-channel
30 --30
±20 ±20
8 --6
9 --7
20 --15
52 --52
2.3
2.5
150
--55 to +150
Unit
V
V
A
A
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7005A-003
5.0
85
0.2
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
1
1.27
0.1
1 : Source1
2 : Gate1
3 : Source2
4 4 : Gate2
0.43 5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
Electrical Connection
8765
W906
LOT No.
SANYO : SOP8
1234
http://semicon.sanyo.com/en/network
72110PA TK IM TC-00002248 No. A1809-1/6


Sanyo Electric Components Datasheet

FW906 Datasheet

N-Channel and P-Channel Silicon MOSFETs

No Preview Available !

Electrical Characteristics at Ta=25°C
FW906
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=10V
ID=4A, VGS=4.5V
ID=4A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=15V, VGS=10V, ID=8A
VDS=15V, VGS=10V, ID=8A
VDS=15V, VGS=10V, ID=8A
IS=8A, VGS=0V
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
ID=--6A, VGS=--10V
ID=--3A, VGS=--4.5V
ID=--3A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=--15V, VGS=--10V, ID=--6A
VDS=--15V, VGS=--10V, ID=--6A
VDS=--15V, VGS=--10V, ID=--6A
IS=--6A, VGS=0V
Ratings
min typ max
Unit
30
1.2
4.5
18
29
39
690
120
75
9.2
44
41
26
12
2.5
1.9
0.81
V
1 μA
±10 μA
2.6 V
S
24 mΩ
41 mΩ
55 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
--30
--1.2
8.5
31
49
57
600
160
120
6.6
37
63
48
12
1.9
2.7
--0.83
--1
±10
--2.6
41
69
80
--1.2
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No. A1809-2/6


Part Number FW906
Description N-Channel and P-Channel Silicon MOSFETs
Maker Sanyo
PDF Download

FW906 Datasheet PDF






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