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2SK3255
N- Channel MOS Silicon FET Very High-Speed Switching Applications
TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature *) : Chip Performance Shown Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time www.DataSheet4U.
K3255 Datasheet
