K4181 - N-Channel Silicon MOSFET

Sanyo

Datasheet Details

Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
For use of lighting & etc.
High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD T.

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Published: Jan 9, 2016 |