N-Channel Junction Silicon FET
General-Purpose Amplifier Applications
· Adoption of FBET process.
· Large yfs.
· Small Ciss.
Absolute Maximum Ratings at Ta = 25˚C
Allowable Power Dissipation
Electrical Characteristics at Ta = 25˚C
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
| yfs |1
| yfs |2
* : The 2SK937 is classified by IDSS as follows (unit : mA) :
40 Y3 52 48 Y4 63 57 Y5 75
VDS=10V, ID=10mA, f=1kHz
VDS=10V, VGS=0, f=1kHz
1 : Source
2 : Gate
3 : Drain
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
–55 to +150
min typ max
40* 75* mA
–2.0 –3.0 –5.0 V
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
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