Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.
[MOSFET].
Low ON-resistance.
1.8V drive.
[SBD].
Short reverse recovery time.
Low forward voltage. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipati.
Full PDF Text Transcription for MCH5837 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MCH5837. For precise diagrams, and layout, please refer to the original PDF.
MCH5837 Datasheet
