1.8V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm)
Ratings --20 ±10 --4.5 --18 1.5 150
--55 to +150
Unit V V A A W °C °C.
Full PDF Text Transcription for MCH6337 (Reference)
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MCH6337. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA0959 MCH6337 SANYO Semiconductors DATA SHEET MCH6337 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resista...
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eneral-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Ratings --20 ±10 --4.5 --18 1.
MCH6337 Datasheet
