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RG2006LN Datasheet Low VF / High-Speed Switching Diode

Manufacturer: SANYO (now Panasonic)

Overview

Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching.

Key Features

  • High breakdown voltage (VRRM=600V).
  • High reliability.
  • One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
  • Fast reverse recovery time.
  • Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Tempe.