RG2006LN - Low VF / High-Speed Switching Diode

Datasheet Summary

Features

High breakdown voltage (VRRM=600V).
High reliability.
One-point ﬁxing type plastic mold package facilitating easy mounting and heat dissipation.
Fast reverse recovery time.
Low noise at the time of reverse recovery. Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Tempe.

Sanyo

📥 Download Datasheet

Datasheet Details

Part number	RG2006LN
Manufacturer	Sanyo
File Size	89.45 KB
Description	Low VF / High-Speed Switching Diode
Datasheet	RG2006LN Datasheet
Additional preview pages of the RG2006LN datasheet.

📁 Similar Datasheet

RG2012 - Metal thin fi lm chip resistors (susumu)
RG20x - (RG2xx) Digital Circuits (Raytheon)
RG2 - Silicon Diode (Sanken electric)
RG2 - ULTRA FAST RECOVERY RECTIFIER DIODES (EIC discrete Semiconductors)
RG2 - High Efficiency Rectifiers (LGE)
RG2 - (RG2x) HIGH EFFICIENCY RECTIFIER (BL)
RG2 - Silicon And Fast Recovery Rectifiers (WEJ)
RG211 - (RG2xx) Digital Circuits (Raytheon)
RG21x - (RG2xx) Digital Circuits (Raytheon)
RG22x - (RG2xx) Digital Circuits (Raytheon)

Other Datasheets by Sanyo

Full PDF Text Transcription

Click to expand full text

Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • High breakdown voltage (VRRM=600V). • High reliability. • One-point ﬁxing type plastic mold package facilitating easy mounting and heat dissipation. • Fast reverse recovery time. • Low noise at the time of reverse recovery.

Published: Dec 23, 2016 |