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SBT100-10G - Schottky Barrier Diode

Key Features

  • Tj=150°C.
  • Short reverse recovery time.
  • Low switching noise.
  • High reliability due to planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Electrical Characteristics at Ta=25°C Conditions 50Hz resistive load, Sine wave Tc=73°C 50Hz sine wa.

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Full PDF Text Transcription (Reference)

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Ordering number : ENA0689 SBT100-10G SANYO Semiconductors DATA SHEET SBT100-10G Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • Tj=150°C. • Short reverse recovery time. • Low switching noise. • High reliability due to planar structure.