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SCH2830 - P-Channel Silicon MOSFET

Key Features

  • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
  • [MOSFET].
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.8V drive.
  • [SBD].
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse).

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Full PDF Text Transcription for SCH2830 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SCH2830. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENA0861 SCH2830 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device ...

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MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • [SBD] • Short reverse recovery time. • Low forward voltage.

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