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SS2003M - Schottky Barrier Diode

Key Features

  • Small Switching noise.
  • Low forward voltage (IF=2A, VF max=0.40V).
  • Small package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj Storage Temperature Tstg Conditions 50Hz sine wave, 1 cycle Ratings 30 30 2.0 10 --55 to +125 --55 to +125 Un.

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Ordering number : EN8345A SS2003M SS2003M SANYO Semiconductors DATA SHEET Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers) Features • Small Switching noise • Low forward voltage (IF=2A, VF max=0.40V) • Small package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj Storage Temperature Tstg Conditions 50Hz sine wave, 1 cycle Ratings 30 30 2.0 10 --55 to +125 --55 to +125 Unit V V A A °C °C Package Dimensions unit : mm (typ) 7022A-014 2.0 654 0.15 SS2003M-TL-E 0 to 0.