LE25FV101T Datasheet, Sanyo Electric

t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256.

the LE25FV101T is offered with a guaranteed sector write endurance of 104 cycles. Data retention is rated greater than .

The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable serial Flash EEPROM. The LE25FV101T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architect.