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2SK3485 - N-Channel Silicon MOSFET

Features

  • Package Dimensions unit : mm 2062A [2SK3485] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID.

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Datasheet Details

Part number 2SK3485
Manufacturer Sanyo Semicon
File Size 56.33 KB
Description N-Channel Silicon MOSFET
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Ordering number : ENN7180 2SK3485 N-Channel Silicon MOSFET www.DataSheet4U.com 2SK3485 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SK3485] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings 20 ± 10 2.5 10 1.0 3.
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