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12A01SP - Low-Frequency General-Purpose Amplifier Applications

Features

  • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ. =0.57Ω [IC=0.5A, IB=25mA]. Small ON-resistance (Ron). 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings --15 --12 --5 --500 --1.0 400 150 --55 to +150 Unit V V V mA A mW °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-B.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
12A01M Low-Frequency General-Purpose Amplifier Applications
12A02CH Low-Frequency General-Purpose Amplifier Applications
12A02SP Low-Frequency General-Purpose Amplifier Applications
12A02SS Low-Frequency General-Purpose Amplifier Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7480 12A01SP PNP Epitaxial Planar Silicon Transistor 12A01SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2033A [12A01SP] 4.0 2.2 Low-frequency Amplifier, small motor drive, muting circuit. Features • • • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.57Ω [IC=0.5A, IB=25mA]. Small ON-resistance (Ron). 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings --15 --12 --5 --500 --1.
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