2SB1527
2SB1527 is PNP Epitaxial Planar Silicon Transistors manufactured by SANYO.
Features
- Low saturation voltage.
- Contains a diode between collector and emitter.
- Contains a bias resistor between base and emitter.
- Large current capacity.
- pact package making it easy to realize high- density, small-sized hybrid ICs.
Package Dimensions unit:mm 2018B
[2SB1527]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage
Marking : NS
ICBO h FE f T Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO
VCB=- 15V, IE=0 VCE=- 2V, IC=- 0.5A VCE=- 2V, IC=- 0.5A VCB=- 10V, f=1MHz IC=- 500m A, IB=- 10m A IC=- 500m A, IB=- 10m A IC=- 10µA, IE=0 IC=- 10m A, RBE=∞
1 : Base 2 : Emitter 3 : Collector SANYO : CP
Ratings
- 20
- 15
- 5
- 0.8
- 2 200 150
- 55 to +150
Unit V V V A A m W ˚C ˚C
Ratings min typ
70 250 30
- 0.2
- 0.95
-...
