2SC3649 transistors equivalent, pnp/npn epitaxial planar silicon transistors.
* Adoption of FBET, MBIT processes.
* High breakdown voltage and large current capacity.
* Ultrasmall size making it easy to provide high-
density hybrid ICs..
Features
* Adoption of FBET, MBIT processes.
* High breakdown voltage and large current capacity.
* Ultrasm.
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