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Sanyo Electric Components Datasheet

2SC4443 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

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Ordering number:EN3200
Features
· Fast switching speed.
· High gain-bandwidth product.
· Low saturation voltage.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1685/2SC4443
High-Speed Switching Applications
Package Dimensions
unit:mm
2059
[2SA1685/2SC4443]
( ) : 2SA1685
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCB=(–)30V, IE=0
VEB=(–)4V, IC=0
VCE=(–)1V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
B : Base
C : Collector
E : Emitter
SANYO : MCP
Ratings
(–)40
(–)20
(–)5
(–)150
(–)300
(–)30
150
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ
60*
700
(400)
max
(–)0.1
(–)0.1
270*
Unit
µA
µA
MHz
MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/7219YT, TS No.3200-1/5


Sanyo Electric Components Datasheet

2SC4443 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

No Preview Available !

2SA1685/2SC4443
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min typ
Output Capacitance
Cob VCB=(–)10V, f=1MHz
(2.9)
2.6
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)10mA, IB=(–)1mA
0.08
(–0.07)
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)10mA, IB=(–)1mA
0.72
(–0.75)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Votage
V(BR)EBO
Delay Time
td
Rise Time
tr
Storage Time
tstg
Fall Time
tf
* : 2SA1685/2SC4443 are classified by 10mA hFE as follos :
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
(–)40
(–)20
(–)5
(14)11
(11)10
(80)70
(16)15
2SA1685 60 3 120 90 4 180
max
(–)0.2
(–)1.0
20
20
180
25
Unit
pF
pF
V
V
V
V
V
V
V
ns
ns
ns
ns
2SC4443 60 3 120 90 4 180 135 5 270
Marking 2SA1685 : YL
2SC4443 : GT
hFE rank 2SA1685 : 3, 4
2SC4443 : 3, 4, 5
Unit (resistance : , capacitance : F)
No.3200-2/5


Part Number 2SC4443
Description PNP/NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
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2SC4443 Datasheet PDF






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