900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Sanyo Electric Components Datasheet

2SC4446 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

No Preview Available !

Ordering number:ENN3013
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1687/2SC4446
Low-Frequency
General-Purpose Amplifier Applications
Features
· Ultrasmall-sized package permitting the 2SA1687/
2SC4446-applied sets to be made small and slim.
· High VEBO.
Package Dimensions
unit:mm
2059B
[2SA1687/2SC4446]
0.3
3
0.15
0 to 0.1
12
0.65 0.65
2.0
0.3 0.6
0.9
( ) : 2SA1687
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()40V, IE=0
Emitter Cutoff Current
IEBO VEB=()10V, IC=0
DC Current Gain
hFE VCE=()6V, IC=()1mA
Gain-Bandwidth Product
fT VCE=()6V, IC=()1mA
* : The 2SA1687/2SC4446 are classified by 1mA hFE as follows :
Marking : D (2SA1687)
Rank
hFE
567
135 to 270 200 to 400 300 to 600
H (2SC4446)
hFE rank : 5, 6, 7
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
()60
()50
()15
()150
()300
()30
150
150
55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
()0.1 µA
()0.1 µA
135*
600*
130 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/5189MO, TS No.3013-1/5


Sanyo Electric Components Datasheet

2SC4446 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
Turn-ON Time
Storage Time
Fall Time
2SA1687/2SC4446
Symbol
Conditions
VCE(sat) IC=()50mA, IB=()5mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()50mA, IB=()5mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
Cob VCB=()6V, f=1MHz
ton See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Ratings
min typ
0.15
(0.25)
()0.85
()60
()50
()15
(3.5)
2.2
50
(460)
590
(60)
110
max
()0.5
()1.2
Unit
V
V
V
V
V
V
pF
pF
ns
ns
ns
ns
ns
Switching Time Test Circuit
IB1
INPUT
IB2
OUTPUT
PW=20µs
D.C.1%
50
VR
1k
+
220µF
RL
+
470µF
VBE=--5V
VCC=20V
10IB1= --10IB2= IC=50mA
For PNP, the polarity is reversed.
--50
2SA1687
--40
From top
--500µA
--450µA
--30 --400µA
--350µA
--300µA
--20
--10
IC -- VCE
--250µA
--200µA
--150µA
--100µA
--50µA
0 IB=0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Collector-to-Emitter Voltage, VCE – V ITR04116
--20
--16 --70µA --6-0-µ5A0µA
IC -- VCE
2SA1687
--40µA
--12 --30µA
--8 --20µA
--10µA
--4
0 IB=0
0 --10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR04118
50
2SC4446
From top
40 500µA
450µA
400µA
350µA
30 300µA
20
10
IC -- VCE
250µA
200µA
150µA
100µA
50µA
0 IB=0
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE – V ITR04117
IC -- VCE
20
70µA
2SC4446
16 60µA
50µA
12 40µA
30µA
8
20µA
4 10µA
0 IB=0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR04119
No.3013-2/5


Part Number 2SC4446
Description PNP/NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
PDF Download

2SC4446 Datasheet PDF






Similar Datasheet

1 2SC4440 NPN Triple Diffused Planar Silicon Transistor
Sanyo Semicon Device
2 2SC4441 NPN Triple Diffused Planar Silicon Transistor
Sanyo Semicon Device
3 2SC4442 Silicon NPN Power Transistor
Inchange Semiconductor
4 2SC4443 PNP/NPN Epitaxial Planar Silicon Transistors
Sanyo Semicon Device
5 2SC4445 Silicon NPN Transistor
Sanken electric
6 2SC4445 SILICON POWER TRANSISTOR
SavantIC
7 2SC4445 NPN Transistor
INCHANGE
8 2SC4446 PNP/NPN Epitaxial Planar Silicon Transistors
Sanyo Semicon Device
9 2SC4446 NPN Epitaxial Planar Silicon Transistor
Guangdong Kexin Industrial





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy