2SC5450 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC5450
Manufacturer	Sanyo Semicon Device
File Size	74.48 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC5450_SanyoSemiconDevice.pdf

High speed.
High breakdown voltage (VCBO=1600V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. www. DataSheet4U. com Package Dimensions unit:mm 2039D [2SC5450] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Juncti.

📁 2SC5450 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Jul 16, 2008 |