2SC5578 transistor equivalent, npn triple diffused planar silicon transistor.
* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
Package Dimensions
unit:mm.
Features
* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process). .
Image gallery
TAGS
Download (Size : 40.26KB)