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2SC5578 - NPN Triple Diffused Planar Silicon Transistor

Features

  • High speed.
  • High breakdown voltage (VCBO=1600V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5578] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symb.

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Datasheet Details

Part number 2SC5578
Manufacturer SANYO (now Panasonic)
File Size 40.26 KB
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet download datasheet 2SC5578 Datasheet
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Full PDF Text Transcription

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Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5578] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 Conditions 2.
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