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2SC5778 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5778] 16.0 3.4 5.6 3.1 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage.

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www.DataSheet4U.com Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5778] 16.0 3.4 5.6 3.1 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.