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2SC5934 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of MBIT process.
  • High-speed switching.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA2117 Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5932 NPN Triple Diffused Planar Silicon Transistor
2SC5933 NPN Triple Diffused Planar Silicon Transistor
2SC5900 NPN TRANSISTOR
2SC5915 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
2SC5947 NPN Triple Diffused Planar Silicon Transistor
2SC5951 NPN Triple Diffused Planar Silicon Transistor
2SC5957 NPN Triple Diffused Planar Silicon Transistor
2SC5957M NPN Triple Diffused Planar Silicon Transistor
2SC5964 NPN Epitaxial Planar Silicon Transistors
2SC5966 NPN SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7906 2SA2117 / 2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • Adoption of MBIT process. • High-speed switching. • Large current capacitance. • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA2117 Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.