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2SC5979 - NPN Epitaxial Planar Silicon Transistor

Key Features

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  • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissi.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5900 NPN TRANSISTOR
2SC5915 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
2SC5932 NPN Triple Diffused Planar Silicon Transistor
2SC5933 NPN Triple Diffused Planar Silicon Transistor
2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENN8070 2SC5979 2SC5979 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features www.DataSheet4U.com • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation.