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Sanyo Electric Components Datasheet

2SC5979 Datasheet

NPN Epitaxial Planar Silicon Transistor

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Ordering number : ENN8070
2SC5979
2SC5979 NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
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Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE width.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
Ratings
100
100
50
6
5
7.5
1.2
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
min
250
Ratings
typ
max
Unit
0.1 µA
0.1 µA
400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21405EA TS IM TB-00000319 No.8070-1/4


Sanyo Electric Components Datasheet

2SC5979 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

2SC5979
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Package Dimensions
unit : mm
2045B
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6.5
5.0 2.3
4 0.5
Package Dimensions
unit : mm
2044B
6.5
5.0
4
min
100
100
50
6
Ratings
typ
400
15
70
120
0.88
35
300
20
max
105
180
1.2
Unit
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
2.3
0.5
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5 1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT VR10
IB1
IB2
RB
50+
100µF
VBE= --5V
IC=10IB1= --10IB2=1A
OUTPUT
RL
+
470µF
VCC=25V
No.8070-2/4


Part Number 2SC5979
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
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2SC5979 Datasheet PDF





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