2SC5979
Key Features
- Adoption of FBET, MBIT process
- High current capacitance
- Low collector-to-emitter saturation voltage
- High-speed switching
- High allowable power dissipation
- Part: 2SC5979
- Description: NPN Epitaxial Planar Silicon Transistor
- Category: Transistor
- Manufacturer: SANYO
- Size: 64.51 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC5976 | Toshiba | Silicon NPN Transistor |
| 2SC5974 | Isahaya Electronics Corporation | SMALL-SIGNAL TRANSISTOR |
| 2SC5975 | Renesas | Silicon NPN Epitaxial Type Transistor |
| 2SC5974A | Isahaya Electronics Corporation | SMALL-SIGNAL TRANSISTOR |
| 2SC5974B | Isahaya Electronics Corporation | SMALL-SIGNAL TRANSISTOR |