* Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Para
2SC6019
Sanyo Semicon Device
209.46 KB
Npn epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : ENN8342 2SC6019 2SC6019 Applications NPN Epitaxial Planar Silicon Transistor DC / DC Converter App.
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