* Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Vo
2SC6043
Sanyo Semicon Device
62.80 KB
Npn epitaxial planar silicon transistors.
www.DataSheet4U.com Ordering number : ENN8326 2SC6043 2SC6043 Applications NPN Epitaxial Planar Silicon Transistors High-Current Switch.
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