* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter V
2SC6064
Sanyo Semicon Device
58.87 KB
Npn epitaxial planar silicon transistors.
Ordering number : ENA0270 2SC6064 2SC6064 Applications NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Volt.
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