* Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage
2SC6144
Sanyo Semicon Device
89.95 KB
Npn epitaxial planar silicon transistor.
Ordering number : ENA1149 www.DataSheet4U.com 2SC6144 SANYO Semiconductors DATA SHEET 2SC6144 Applications NPN Epitaxial Planar Silicon.
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