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2SJ658 - P-Channel MOSFET

Features

  • Package Dimensions unit : mm 2178 [2SJ658] 5.0 4.0 4.0 Low ON-resistance. High-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤1.

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www.DataSheet4U.com Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 [2SJ658] 5.0 4.0 4.0 Low ON-resistance. High-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -20 ±10 --2 --8 0.
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