N-Channel Junction Silicon FET
High-Frequency Low-Noise Amplifier
· Adoption of FBET process.
· Amateur radio equipment.
· UHF amplifiers, MIX, OSC, analog switches.
· Large | yfs |.
· Small Ciss.
1 : Source
2 : Gate
3 : Drain
SANYO : PCP
Absolute Maximum Ratings at Ta = 25˚C
Allowable Power Dissipation
Mounted on ceramic board (250mm2× 0.8mm)
–55 to +150
Electrical Characteristics at Ta = 25˚C
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
| yfs |
** : Pulse Test Pulse Width≤2mS
* : The 2SK2218 is classified by IDSS as follows (unit : mA).
VDS=5V, VGS=0, f=1kHz
40 3 52 48 4 63 57 5 75
Marking : KN
IDSS ranks : 3, 4, 5
min typ max
40* 75* mA
–1.2 –2.6 –4.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/90195YK (KOTO) BX-0347 No.5202–1/6