2SK2218 - N-Channel Junction Silicon FET

Sanyo Semicon Device

Datasheet Details

Part number	2SK2218
Manufacturer	Sanyo Semicon Device
File Size	211.53 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK2218_SanyoSemiconDevice.pdf

Adoption of FBET process.
Amateur radio equipment.
UHF amplifiers, MIX, OSC, analog switches.
Large | yfs |.
Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Symbol VDSX VGDS IG ID Allowable Power Dissi.

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Published: Mar 30, 2005 |