2SK2406
2SK2406 is N-Channel Silicon MOSFET manufactured by SANYO.
Features
- Low ON-resistance.
- Ultrahigh-speed switching.
- High-speed diode.
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) ⏐yfs⏐
RDS(on)
ID=1m A, VGS=0V VDS=450V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=0.5A ID=0.5A, VGS=10V
Ratings 450 ±30 1 4 1 30 150
--55 to +150
Unit V V A A W W °C °C min 450
2.0 0.4
Ratings typ max
Unit
1 m A
±100 n A
3.0 V
0.8 S
3.5 4.5 Ω
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, munication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications,...