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Sanyo Electric Components Datasheet

2SK2464 Datasheet

N-Channel Silicon MOSFET

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Ordering number:ENN6475
N-Channel Silicon MOSFET
2SK2464
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Enables simplified fabrication, high-density mound-
ing, and miniaturization in end products due to the
surface mountable package.
Package Dimensions
unit:mm
2128
[2SK2464]
8.2
7.8
6.2
3
0.6
12
1.0 1.0
2.54 2.54
5.08
10.0
6.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW10µs, duty cycle1%
Tc=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss1
Ciss2
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±20V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=22A
ID=22A, VGS=10V
VDS=0V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
0.3
0.6
7.8
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Ratings
30
±20
45
180
50
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
30 V
100 µA
±100 nA
2 4V
20 30
S
8.5 12 m
3750 4300 pF
2700
pF
2300
pF
450 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-2175 No.6475–1/3


Sanyo Electric Components Datasheet

2SK2464 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
2SK2464
Symbol
Conditions
td(on)
tr
td(off)
tf
VSD
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=45A, VGS=0
Switching Time Test Circuit
Vin
10V
0V
PW=10µs
D.C.1%
P.G
Vin
G
50
VDD=15V
ID=22A
RL=0.68
VOUT
D
2SK2464
S
Ratings
min typ max
Unit
45 ns
350 ns
100 ns
100 ns
1.0 1.5 V
ID -- VDS
100
80 VGS=10V
6.0V
60
5.5V
40
20
0
0
100
7
5
5.0V
4.5V
2 46 8
Drain-to-Source Voltage, VDS – V
yfs-- ID
10
IT00772
3
2 Tc=--25°C
25°C
10 75°C
7
5
3
2
5 7 1.0
2 3 5 7 10
23
Drain Current, ID – A
5 7 100 2
IT00774
ID -- VGS
100
VDS=10V
80
60
40
20
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS – V IT00773
RDS(on) -- VGS
30
ID=22A
Tc=25°C
25
20
15
10
5
0
4 6 8 10 12 14 16 18
Gate-to-Source Voltage, VGS – V IT00775
No.6475–2/3


Part Number 2SK2464
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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2SK2464 Datasheet PDF






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