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Sanyo Electric Components Datasheet

2SK3796 Datasheet

N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier

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2SK3796 pdf
Ordering number : EN8636
2SK3796
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
2SK3796
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Applicatins
Low-frequency general-purpose amplifier, impedance conversion, analog switches applications.
Features
Small IGSS.
Small Ciss
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : K
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IG=--10µA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=1µA
Ratings
30
--30
10
10
100
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
min
--30
--0.18
Ratings
typ
max
Unit
V
--1.0 nA
--0.95
--2.2 V
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32207GB TI IM TC-00000609 No.8636-1/4


Sanyo Electric Components Datasheet

2SK3796 Datasheet

N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier

No Preview Available !

2SK3796 pdf
2SK3796
Continued from preceding page.
Parameter
www.DataSheet4U.com
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
Symbol
IDSS
yfs
Ciss
Crss
RDS(on)
Conditions
VDS=10V, VGS=0V
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10mV, VGS=0V
* : The 2SK3796 is classified by IDSS as follows : (unit : mA).
Rank
2
3
4
IDSS
0.6 to 1.5
1.2 to 3.0
2.5 to 6.0
Package Dimensions
unit : mm (unit)
7027-003
1.6
0.4 0.8 0.4
1
23
0.1 MIN
1 : Source
2 : Drain
3 : Gate
SANYO : SMCP
min
0.6*
3.0
Ratings
typ
6.5
4
1.1
200
max
6.0*
Unit
mA
mS
pF
pF
ID -- VDS
5.0
4.0
3.0 VGS=0V
2.0 --0.1V
--0.2V
1.0 --0.3V
--0.4V
0
0 1.0 2.0 3.0 4.0 5.0
Drain-to-Source Voltage, VDS -- V ITR00633
ID -- VGS
8
VDS=10V
6
--1.50
4
I DSS=5.0mA3.0mA
2
--1.25
--1.00
--0.75
--0.50
1.0mA
--0.25
0
0
Gate-to-Source Voltage, VGS -- V ITR00635
ID -- VDS
5
4
VGS=0V
3
--0.1V
2
--0.2V
1 --0.3V
--0.4V
0
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V ITR00634
ID -- VGS
5
VDS=10V
4
3
2
75°C 1
25°C
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
Gate-to-Source Voltage, VGS -- V ITR00636
No.8636-2/4


Part Number 2SK3796
Description N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier
Maker Sanyo Semicon Device
Total Page 4 Pages
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