Datasheet4U Logo Datasheet4U.com

30A01C - PNP Transistor

Features

  • Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 0.8 1.1 Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
30A02MH Bipolar Transistor ON Semiconductor
30A1000V SILICON RECTIFIERS Yangzhou yangjie electronic
30APF04 Fast Recovery Rectifier INCHANGE

Other Datasheets by SANYO (now Panasonic)

Part Number Description
30A01S PNP Transistor
30A01SP PNP Transistor
30A02SS PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Ordering number : ENN7509 30A01C PNP Epitaxial Planar Silicon Transistor 30A01C Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2018B [30A01C] 0.4 Low-frequency power amplifier, muting circuit. Features • • • • Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 0.8 1.
Published: |