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50C02SS - N-Channel MOSFET

Features

  • 0.3.
  • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.3 Side View 0.1 0.25 3 0.8 1 0.45 0.2 2 Bottom View 0.07 0.07 1.4 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 2 1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-B.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENN7519 50C02SS NPN Epitaxial Planar Silicon Transistor 50C02SS Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2159A [50C02SS] Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features • • • 0.3 • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.3 Side View 0.1 0.25 3 0.8 1 0.45 0.2 2 Bottom View 0.07 0.07 1.4 Side View 0.
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