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Sanyo Electric Components Datasheet

50C02SS Datasheet

Low-Frequency General-Purpose Amplifier Applications

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Ordering number : ENN7519
50C02SS
NPN Epitaxial Planar Silicon Transistor
50C02SS
Low-Frequency
General-Purpose Amplifier Applications
Applications
Low-frequency Amplifer, high-speed switching,
small motor drive, muting circuit.
Package Dimensions
unit : mm
2159A
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=175m[IC=0.5A, IB=50mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
Top View
1.4
0.25
3
12
0.45
0.2
[50C02SS]
Side View
0.1
Bottom View
Side View
3
21
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a glass-epoxy board (20!30!1.6mm)
Ratings
60
50
5
400
800
200
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Marking : YN
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=10mA
VCE=10V, IC=50mA
min
300
Ratings
typ
max
Unit
100 nA
100 nA
800
500 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100152 No.7519-1/4
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Sanyo Electric Components Datasheet

50C02SS Datasheet

Low-Frequency General-Purpose Amplifier Applications

No Preview Available !

www.DataSheet.co.kr
50C02SS
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
RB
50
+
220µF
VBE= --5V
IC=20IB1= --20IB2=200mA
OUTPUT
RL
+
470µF
VCC=25V
min
60
50
5
Ratings
typ
2.8
50
0.9
30
340
55
max
100
1.2
Unit
pF
mV
V
V
V
V
ns
ns
ns
500
450
400
350
300
250
200
150
100
50
0
0
1000
7
5
3
2
IC -- VCE
10mA
8mA
7mA
5mA
3mA
2mA
1mA
600µA
200µA
IB=0
100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV IT05106
hFE -- IC
Ta=75°C
VCE=2V
25°C
--25°C
100
7
5
3
2
10
1.0
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT05108
IC -- VBE
600
VCE=2V
500
400
300
200
100
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT05107
VCE(sat) -- IC
3
IC / IB=10
2
100
7
5
3 25°C
2
10
7
5
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT05411
No.7519-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 50C02SS
Description Low-Frequency General-Purpose Amplifier Applications
Maker Sanyo Semicon Device
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50C02SS Datasheet PDF






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