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5LN01N - Ultrahigh-Speed Switching Applications

Features

  • Package Dimensions unit : mm 2178 5.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [5LN01N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 14.0 1 2 3 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty c.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6558 5LN01N N-Channel Silicon MOSFET 5LN01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 5.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [5LN01N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 14.0 1 2 3 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 SANYO : NP Ratings 50 ±10 0.1 0.4 0.
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